Faculty

Institution

Unit

Venue

Zhong Chen

Associate Professor

University of Arkansas

Affiliations

College of Engineering

Electrical Engineering

Zhong Chen is currently serving as a College Of Engineering Associate Professor at University of Arkansas.

Honors

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Experiences

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Education

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Zhong Chen

University of Arkansas

Associate Professor

You can click a keyword to filter the displayed items

electrical engineering power electronics semiconductors optoelectronics materials science microelectronics electronics engineering solid-state electronics applied physics electronic materials semiconductor devices power semiconductor devices aluminum gallium nitride vlsi technology thermal engineering semiconductor technology power devices printed electronics sensors microwave technology gan power device power electronics converter thin films surface science power engineering epitaxial growth industrial electronics electronic engineering laser science silicon carbide mosfets sic mosfet instrumentation materials engineering material research semiconductor materials high voltage engineering power management sic mosfets high-temperature analysis reliability engineering microelectronics reliability crystal growth crystal engineering electronic packaging scientific computing additive manufacturing light science low-power electronics temperature measurement condition monitoring device reliability performance characterization circuit design semiconductor device fabrication crystal growth technology thin film processing thin film process technology molecular beam epitaxy aluminium nitride organic electronics chemical vapor deposition power system analysis vacuum device broad waveguide structures gesn lasers linear temperature sensor high power applications gan-on-sic heterojunction diode correction method threshold voltage hysteresis short-circuit behavior optical galvanic isolations gan-based mqw photodetector harsh environments current sensor electrostatic discharge electromagnetic interference

Notable Scholarly Works

Notable Federal Grants

Collaborators

A Review of Silicon Carbide Cmos Technology for Harsh Environments. Materials Science in Semiconductor Processing (2024)

Hui WangPengyu LaiMd Zahidul IslamAbu Shahir Md Khalid HasanAnthony Di MauroNur-E-Afra AnikaRobert RussellZhuowen FengKevin ChenAsif FaruqueThomas WhiteZhong ChenH. Alan Mantooth

materials sciencetechnologyextreme environmentselectronic materialsmaterial researchsemiconductor materialsmaterials engineeringsemiconductor devicessolid-state electronicssemiconductor device fabricationelectronicssemiconductorselectrical engineeringmicroelectronicspower electronicsoptoelectronicsharsh environmentssemiconductor technology

Characterization of Silicon Carbide Low-Voltage N/P-Channel Mosfets at High Temperatures. IEEE Journal of the Electron Devices Society (2024)

Hui WangPengyu LaiAffan AbbasiMd Maksudul HossainAsif FaruqueH. Alan MantoothZhong Chen

electronic materialssemiconductor devicessolid-state electronicselectronicssemiconductorselectrical engineeringhigh temperatures

Dynamic Analytical Switching Loss Model of Sic Mosfet Considering Threshold Voltage Instability. IEEE Transactions on Power Electronics (2024)

Yumeng CaiPeng SunYuankui ZhangCong ChenZhibin ZhaoXuebao LiLei QiZhong ChenHans-Peter Nee

power semiconductor devicesthreshold voltage instabilitysic mosfetsemiconductorspower electronicselectrical engineeringengineering

Electrical and Thermal Characterization of (250 °C) Sic Power Module Integrated With Ltcc-Based Isolated Gate Driver. e-Prime - Advances in Electrical Engineering Electronics and Energy (2024)

Salahaldein AhmedPengyu LaiSudharsan ChinnaiyanAlan MantoothZhong Chen

thermal characterizationsemiconductorspower electronicselectrical engineeringsic power module

Electrical Safe Operating Area and Latent Damage of Sic Low-Voltage Nmos Under Tlp and Vf-Tlp Stresses. IEEE Transactions on Electron Devices (2024)

Pengyu LaiHui WangH. Alan MantoothZhong Chen

semiconductor deviceslatent damageelectronicsvf-tlp stresseselectrical engineeringsic low-voltage nmos

Epitaxial Growth and Characterization of Gaas (111) on 4H-Sic. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2024)

S DasN M EldoseH StanchuF Maia de OliveiraM BenamaraYI Mazur...

thin filmsmaterials scienceepitaxial growthpower semiconductor devicessurface sciencesemiconductor devicesvacuum devicesolid-state electronicselectronicssemiconductorselectrical engineeringmicroelectronicspower electronicsmicrowave technologyapplied physicsvlsi technologysemiconductor technology

Investigation on Gate Oxide Degradation of Sic Mosfet in Switching Operation. IEEE Transactions on Power Electronics (2024)

Yumeng CaiPeng SunCong ChenYuankui ZhangZhibin ZhaoXuebao LiLei QiZhong ChenHans-Peter Nee

power electronicssic mosfetelectrical engineeringmicroelectronics

Research on Electronic and Optical Properties of Pristine and Ag/Au/Cu-Doped Graphene/Mos2 Heterostructures. Diamond and Related Materials (2024)

Lei TianChengyu HeFei LingZhong ChenXianrui Li

semiconductor nanostructuresmaterials sciencemultilayer heterostructureselectronic materialsmaterial researchoptical propertiesdiamond-like carbonsolid-state electronicselectronicsadvanced materialssemiconductorselectrical engineeringwide-bandgap semiconductorsapplied physicsgrapheneoptoelectronicscarbon-based materials

Temperature, Sensitivity, and Frequency Response of Aln/Gan Heterostructure Micro-Hall Effect Sensor. IEEE Transactions on Electron Devices (2024)

Satish ShettySavannah R. EisnerAyesha HassanAnand LalwaniDinesh BaralYuriy I. MazurDebbie G. SeneskyH. O. H. ChurchillZhong ChenH. Alan MantoothGregory J. Salamo

materials scienceprinted electronicspower electronicsoptoelectronicselectronic materialssemiconductor devicessensorssolid-state electronicssemiconductorsmicroelectronicsapplied physicsaluminum gallium nitrideelectronicsaluminium nitridemicrowave technologygan power devicefrequency responseelectrical engineeringbioelectronics

A Medium-Voltage Multilevel Hybrid Converter Using 3.3Kv Silicon Carbide Mosfets and Silicon Igbt Modules. 2022 IEEE Applied Power Electronics Conference and Exposition (APEC) (2023)

Fei DiaoPengyu LaiFeng GuoXinyuan DuPeng SunYue ZhaoZhong ChenYufei Li

silicon carbide mosfetssilicon igbt modulessemiconductorspower electronicselectrical engineeringpower electronics converter

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Zhong Chen

Associate Professor

University of Arkansas

Affiliations

College of Engineering

Electrical Engineering

Zhong Chen is currently serving as a College Of Engineering Associate Professor at University of Arkansas.

Honors

Create free account to unlock more features

Experiences

Create free account to unlock more features

Education

Create free account to unlock more features

Zhong Chen

University of Arkansas

Associate Professor

You can click a keyword to filter the displayed items

Notable Scholarly Works

Notable Federal Grants

Collaborators

A Review of Silicon Carbide Cmos Technology for Harsh Environments. Materials Science in Semiconductor Processing (2024)

Hui WangPengyu LaiMd Zahidul IslamAbu Shahir Md Khalid HasanAnthony Di MauroNur-E-Afra AnikaRobert RussellZhuowen FengKevin ChenAsif FaruqueThomas WhiteZhong ChenH. Alan Mantooth

Characterization of Silicon Carbide Low-Voltage N/P-Channel Mosfets at High Temperatures. IEEE Journal of the Electron Devices Society (2024)

Hui WangPengyu LaiAffan AbbasiMd Maksudul HossainAsif FaruqueH. Alan MantoothZhong Chen

electronic materialssemiconductor devicessolid-state electronicselectronicssemiconductorselectrical engineeringhigh temperatures

Dynamic Analytical Switching Loss Model of Sic Mosfet Considering Threshold Voltage Instability. IEEE Transactions on Power Electronics (2024)

Yumeng CaiPeng SunYuankui ZhangCong ChenZhibin ZhaoXuebao LiLei QiZhong ChenHans-Peter Nee

power semiconductor devicesthreshold voltage instabilitysic mosfetsemiconductorspower electronicselectrical engineeringengineering

Electrical and Thermal Characterization of (250 °C) Sic Power Module Integrated With Ltcc-Based Isolated Gate Driver. e-Prime - Advances in Electrical Engineering Electronics and Energy (2024)

Salahaldein AhmedPengyu LaiSudharsan ChinnaiyanAlan MantoothZhong Chen

thermal characterizationsemiconductorspower electronicselectrical engineeringsic power module

Electrical Safe Operating Area and Latent Damage of Sic Low-Voltage Nmos Under Tlp and Vf-Tlp Stresses. IEEE Transactions on Electron Devices (2024)

Pengyu LaiHui WangH. Alan MantoothZhong Chen

semiconductor deviceslatent damageelectronicsvf-tlp stresseselectrical engineeringsic low-voltage nmos

Epitaxial Growth and Characterization of Gaas (111) on 4H-Sic. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2024)

S DasN M EldoseH StanchuF Maia de OliveiraM BenamaraYI Mazur...

Investigation on Gate Oxide Degradation of Sic Mosfet in Switching Operation. IEEE Transactions on Power Electronics (2024)

Yumeng CaiPeng SunCong ChenYuankui ZhangZhibin ZhaoXuebao LiLei QiZhong ChenHans-Peter Nee

power electronicssic mosfetelectrical engineeringmicroelectronics

Research on Electronic and Optical Properties of Pristine and Ag/Au/Cu-Doped Graphene/Mos2 Heterostructures. Diamond and Related Materials (2024)

Lei TianChengyu HeFei LingZhong ChenXianrui Li

Temperature, Sensitivity, and Frequency Response of Aln/Gan Heterostructure Micro-Hall Effect Sensor. IEEE Transactions on Electron Devices (2024)

Satish ShettySavannah R. EisnerAyesha HassanAnand LalwaniDinesh BaralYuriy I. MazurDebbie G. SeneskyH. O. H. ChurchillZhong ChenH. Alan MantoothGregory J. Salamo

A Medium-Voltage Multilevel Hybrid Converter Using 3.3Kv Silicon Carbide Mosfets and Silicon Igbt Modules. 2022 IEEE Applied Power Electronics Conference and Exposition (APEC) (2023)

Fei DiaoPengyu LaiFeng GuoXinyuan DuPeng SunYue ZhaoZhong ChenYufei Li

silicon carbide mosfetssilicon igbt modulessemiconductorspower electronicselectrical engineeringpower electronics converter

1
2
3
4
5
6
10 / page

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Anant Agarwal

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materials science

electronic materials

Mark Law

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circuit simulation

partial differential equation

Douglas C. Hopkins

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Christina DiMarino

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power conversion

Srabanti Chowdhury

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Dwight C. Streit

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wafer scale processing

Michael L Alles

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