Faculty

Institution

Unit

Venue

Bharat L Bhuva

Vanderbilt University

Affiliations

School of Engineering

Electrical and Computer Engineering

NoneBharat L Bhuva is currently serving as a Electrical And Computer Engineering faculty at Vanderbilt University.

Honors

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Experiences

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Education

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Bharat L Bhuva

Vanderbilt University

You can click a keyword to filter the displayed items

electrical engineering microelectronics applied physics vlsi circuit vlsi technology nuclear science nuclear physics electronics nuclear engineering semiconductors systems engineering engineering vlsi design optoelectronics solid-state electronics microelectronics reliability power electronics radiation semiconductor devices reliability engineering circuit design circuit reliability reliability particle physics hardware reliability electronic engineering microwave technology defect tolerance single-event transients device reliability semiconductor technology semiconductor device fabrication nuclear power dosimetry fusion engineering electronic materials nuclear safety nanotechnology soft errors circuit analysis flip-flop designs single-event effects advanced technology nodes thermal engineering technology scaling neutron scattering high voltage engineering supply voltage nuclear medicine nuclear energy radiation effects temperature dependence single event upsets laser science advanced technologies soft error rate sequential circuits bias dependence nuclear materials set pulse widths bulk cmos elevated temperatures frequency control radio frequency radio engineering error correction ion beam instrumentation bulk finfets information technology condition monitoring fault estimation performance characterization computer-aided design microwave engineering performance scalability power control

Notable Scholarly Works

Notable Federal Grants

Collaborators

Evaluation of Fin Geometry and Threshold Voltage Variants on Single-Event Effects in 7Nm, 5Nm, and 3Nm Bulk Finfet Technologies. IEEE Transactions on Nuclear Science (2024)

C.N. Nuñez SanchezN.J. PieperY. XiongJ.B. KronenbergD. R. BallB. L. Bhuva

fin geometryfull duplexvlsi technologyoptoelectronicselectronic materialsoptical propertiescomputational electromagneticsnuclear sciencesolid-state electronicsmicroelectronicsemerging memory technologiesmechanical engineeringnanoelectronicsthreshold voltage variantsmicrowave technologysingle-event effectsnanoscale modelingengineeringferroelectric applicationbulk finfet technologieselectrical engineeringnuclear engineering

Evaluation of Threshold Frequencies for Logic Single-Event Upsets at Bulk Finfet Technology Nodes. IEEE Transactions on Nuclear Science (2024)

Yoni XiongNicholas J. PieperJenna B. KronenbergYueh ChiangRita FungShi-Jie WenBharat L. Bhuva

systems engineeringthreshold frequenciesnuclear physicsnuclear sciencelogic single-event upsetselectrical engineeringapplied physicsnuclear engineering

Multicell Upsets in Flip-Flops in Advanced Finfet Nodes. IEEE Transactions on Nuclear Science (2024)

Nicholas J. PieperYoni XiongJenna B. KronenbergCassandra N. Nuñez SanchezMichael DelaneyDennis BallMegan CaseyRita FungBharat L. Bhuva

advanced packaging (semiconductors)vlsi technologymulticell upsetsmechanical engineeringadvanced finfet nodescomputational electromagneticscomputer engineeringnuclear engineeringnuclear sciencenanoelectronicselectrical engineeringmicroelectronicsflexible electronicsfeedback loopoptoelectronicsactive control

Multiple Bit Upsets in Register Circuits at the 5-Nm Bulk Finfet Node. 2022 IEEE International Reliability Physics Symposium (IRPS) (2024)

Yoni XiongNicholas J. PieperJenna B. KronenbergDennis R. BallMegan CaseyBharat L. Bhuva

multiple bit upsetsoptoelectronicsregister circuitselectrical engineering

Scaling Trends and Bias Dependence of Sram Ser From 16-Nm to 3-Nm Finfet. 2022 IEEE International Reliability Physics Symposium (IRPS) (2024)

B. NarasimhamA. R. MontoyaC. PaoneT. RiehleM. SmithL. TsauD. BallB. Bhuva

electrical engineeringsram serbias dependencenanotechnologyengineering

Seu Cross-Section Trends for Threshold Voltage Options From 16-Nm to 3-Nm Bulk Finfet Nodes. IEEE Transactions on Nuclear Science (2024)

Yoni XiongNicholas J. PieperJenna B. KronenbergMichael DelaneyCassandra N. N. SanchezDennis R. BallMegan CaseyRita FungShi-Jie WenBharat L. Bhuva

computational electromagneticscomputer engineeringnuclear engineeringnuclear sciencenanoelectronicsseu cross-section trendsthreshold voltage optionselectrical engineeringradiationengineering

Single-Event Performance of Flip Flop Designs at the 5-Nm Bulk Finfet Node at Near-Threshold Supply Voltages. 2022 IEEE International Reliability Physics Symposium (IRPS) (2024)

J. KronenbergY. XiongN. PieperD. BallB. Bhuva

flip flop designspower electronicselectrical engineeringmicroelectronicsnear-threshold supply voltagessingle-event performance

Total-Ionizing Dose Damage From X-Ray Pcb Inspection Systems. 2022 IEEE International Reliability Physics Symposium (IRPS) (2024)

N.J. PieperM. ChunY. XiongH.M. DattiloJ. KronenbergS. BaegS.-J. WenR. FungD. ChanC. EscobarB.L. Bhuva

total-ionizing dose damagematerials scienceradiation effectsradiation oncologyx-ray diffractionradiationapplied physicscorrosion

Effects of Collected Charge and Drain Area on Se Response of Srams at the 5-Nm Finfet Node. 2022 IEEE International Reliability Physics Symposium (IRPS) (2023)

N.J. PieperY. XiongD.R. BallJ. PasternakB.L. Bhuva

drain arease responsesemiconductorselectrical engineeringcollected charge

Effects of Tid on Sram Data Retention Stability at the 5-Nm Node. IEEE Transactions on Nuclear Science (2023)

Nicholas J. PieperYoni XiongJohn PasternakDennis R. BallBharat L. Bhuva

vlsi technologyintermittently connected deviceradiation oncologynuclear physicsnuclear engineeringsemiconductor memorynuclear sciencesolid-state electronicselectronicssemiconductorselectrical engineeringmicroelectronicspower electronicsradiationoptoelectronicsengineering

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Bharat L Bhuva

Vanderbilt University

Affiliations

School of Engineering

Electrical and Computer Engineering

NoneBharat L Bhuva is currently serving as a Electrical And Computer Engineering faculty at Vanderbilt University.

Honors

Create free account to unlock more features

Experiences

Create free account to unlock more features

Education

Create free account to unlock more features

Bharat L Bhuva

Vanderbilt University

You can click a keyword to filter the displayed items

Notable Scholarly Works

Notable Federal Grants

Collaborators

Evaluation of Fin Geometry and Threshold Voltage Variants on Single-Event Effects in 7Nm, 5Nm, and 3Nm Bulk Finfet Technologies. IEEE Transactions on Nuclear Science (2024)

C.N. Nuñez SanchezN.J. PieperY. XiongJ.B. KronenbergD. R. BallB. L. Bhuva

Evaluation of Threshold Frequencies for Logic Single-Event Upsets at Bulk Finfet Technology Nodes. IEEE Transactions on Nuclear Science (2024)

Yoni XiongNicholas J. PieperJenna B. KronenbergYueh ChiangRita FungShi-Jie WenBharat L. Bhuva

systems engineeringthreshold frequenciesnuclear physicsnuclear sciencelogic single-event upsetselectrical engineeringapplied physicsnuclear engineering

Multicell Upsets in Flip-Flops in Advanced Finfet Nodes. IEEE Transactions on Nuclear Science (2024)

Nicholas J. PieperYoni XiongJenna B. KronenbergCassandra N. Nuñez SanchezMichael DelaneyDennis BallMegan CaseyRita FungBharat L. Bhuva

Multiple Bit Upsets in Register Circuits at the 5-Nm Bulk Finfet Node. 2022 IEEE International Reliability Physics Symposium (IRPS) (2024)

Yoni XiongNicholas J. PieperJenna B. KronenbergDennis R. BallMegan CaseyBharat L. Bhuva

multiple bit upsetsoptoelectronicsregister circuitselectrical engineering

Scaling Trends and Bias Dependence of Sram Ser From 16-Nm to 3-Nm Finfet. 2022 IEEE International Reliability Physics Symposium (IRPS) (2024)

B. NarasimhamA. R. MontoyaC. PaoneT. RiehleM. SmithL. TsauD. BallB. Bhuva

electrical engineeringsram serbias dependencenanotechnologyengineering

Seu Cross-Section Trends for Threshold Voltage Options From 16-Nm to 3-Nm Bulk Finfet Nodes. IEEE Transactions on Nuclear Science (2024)

Yoni XiongNicholas J. PieperJenna B. KronenbergMichael DelaneyCassandra N. N. SanchezDennis R. BallMegan CaseyRita FungShi-Jie WenBharat L. Bhuva

computational electromagneticscomputer engineeringnuclear engineeringnuclear sciencenanoelectronicsseu cross-section trendsthreshold voltage optionselectrical engineeringradiationengineering

Single-Event Performance of Flip Flop Designs at the 5-Nm Bulk Finfet Node at Near-Threshold Supply Voltages. 2022 IEEE International Reliability Physics Symposium (IRPS) (2024)

J. KronenbergY. XiongN. PieperD. BallB. Bhuva

flip flop designspower electronicselectrical engineeringmicroelectronicsnear-threshold supply voltagessingle-event performance

Total-Ionizing Dose Damage From X-Ray Pcb Inspection Systems. 2022 IEEE International Reliability Physics Symposium (IRPS) (2024)

N.J. PieperM. ChunY. XiongH.M. DattiloJ. KronenbergS. BaegS.-J. WenR. FungD. ChanC. EscobarB.L. Bhuva

total-ionizing dose damagematerials scienceradiation effectsradiation oncologyx-ray diffractionradiationapplied physicscorrosion

Effects of Collected Charge and Drain Area on Se Response of Srams at the 5-Nm Finfet Node. 2022 IEEE International Reliability Physics Symposium (IRPS) (2023)

N.J. PieperY. XiongD.R. BallJ. PasternakB.L. Bhuva

drain arease responsesemiconductorselectrical engineeringcollected charge

Effects of Tid on Sram Data Retention Stability at the 5-Nm Node. IEEE Transactions on Nuclear Science (2023)

Nicholas J. PieperYoni XiongJohn PasternakDennis R. BallBharat L. Bhuva

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