Faculty

Institution

Unit

Venue

Wenjuan Zhu

Associate Professor

UIUC

Affiliations

The Grainger College of Engineering

Department of Electrical and Computer Engineering

Electrical & Computer Engineering

Wenjuan Zhu is currently serving as an Electrical And Computer Engineering Associate Professor at Uiuc.

Honors

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Experiences

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Education

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Wenjuan Zhu

UIUC

Associate Professor

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applied physics electronic materials semiconductors materials science electrical engineering advanced functional materials solid-state electronics electronics condensed matter graphene microelectronics thin films condensed matter physics physics nanoelectronics quantum materials graphene-based nano-antennas semiconductor devices graphene nanoribbons advanced dielectric material research layered materials carbon semiconductor technology quantum heterostructures transition metal chalcogenides ferroelectric application crystal growth oxide electronics multilayer heterostructures low dimensional materials interface science emerging memory technologies chemical vapor deposition electroceramics crystal research microelectronics reliability wide-bandgap semiconductors semiconductor materials semiconductor device fabrication solid-state physics semiconductor memory semiconductor nanostructures black phosphorus vibrational spectroscopy vlsi technology gan power device aluminum gallium nitride electronic memory thin film processing topological heterostructures nanosheets tunneling microscopy defect formation material analysis sub-picometer precision plasmonics charge carrier transport scanning probe microscopy beyond cmos thermal stability electronic properties high temperature transition metal dichalcogenides hafnium oxide raman spectroscopy photonic devices ferroelectric tunneling junctions p-channel flash memory cvd mos2 mono-layer graphene graphene/insulator stacks graphene nanostructures two-dimensional materials graphene landscape graphene wrinkles flexible electronics nano energy nano scale

Notable Scholarly Works

Notable Federal Grants

Collaborators

Magnetic Proximity Effects in Iron Germanium Telluride/Platinum Heterostructures. ACS Applied Materials & Interfaces (2025)

Stasiu T. ChyczewskiSuji ParkWenjuan Zhu

physicsmaterials scienceferromagnetismmagnetismmagnetic materialsquantum heterostructuresmagnetic devicesmagnetoresistancemagnetic proximity effectsmaterial researchcondensed matterapplied physicsnanotechnologyspintronicsspintronic materialsadvanced functional materialscondensed matter physicsvdw magnetiron germanium telluride

Non-Volatile Reconfigurable Four-Mode Van Der Waals Transistors and Transformable Logic Circuits. ACS Nano (2025)

Junzhe KangHanwool LeeAshwin TungaXiaotong XuYe LinZijing ZhaoHojoon RyuChun-Chia TsaiTakashi TaniguchiKenji WatanabeShaloo RakhejaWenjuan Zhu

polarity switchingadvanced functional materialselectronic materialssemiconductor memorynanoelectronicsnon-volatile memorysolid-state electronicstransistor polarityelectronicssemiconductorselectrical engineeringelectronic memoryapplied physicsmolecular electronicsemerging memory technologiesmultilayer graphene

Single‐Step Synthesis of in‐Plane 1T'‐2H Heterophase Mote 2 for Low‐Resistance Contacts. Advanced Functional Materials (2025)

Ye LinHanwool LeeJunzhe KangZhiyu WangRichard T. HaaschStasiu T. ChyczewskiZetai LiuHuai‐Chung ChuangJun‐Fei ZhengWenjuan Zhu

thin filmsmaterials sciencechemical vapor depositionadvanced functional materialsmaterial chemistryelectronic materialsmaterial researchtransition metal chalcogenidestransistor technologylayered materialssolid-state electronicssemiconductorslow‐resistance contactscrystal engineeringapplied physicsnanotechnology

Strong Damping-Like Torques in Wafer-Scale Mote 2 Grown by Mocvd. ACS Applied Materials & Interfaces (2025)

Stasiu T. ChyczewskiHanwool LeeShuchen LiMarwan EladlJun-Fei ZhengAxel HoffmannWenjuan Zhu

thin filmsmaterials sciencemagnetismmagnetic devicesmagnetoresistanceelectronic materialsmaterial researchcondensed mattersolid-state electronicsmicroelectronicsapplied physicsspintronicselectronicsspintronic materialsmote2 filmmocvd-grown mote2strong damping-like torquesadvanced functional materialsspin dynamicsquantum materials

Content-Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing. ACS Nano (2024)

Zijing ZhaoJunzhe KangAshwin TungaHojoon RyuAnkit ShuklaShaloo RakhejaWenjuan Zhu

microarchitecturecomputer engineeringcomputer architectureintegrated circuitsin-memory computingcam cellselectrical engineeringsingle transistoremerging memory technologiesvlsi circuit

Control-Gate-Free Reconfigurable Transistor Based on 2D Mote2 With Asymmetric Gating. Applied Physics Letters (2024)

Zijing ZhaoJunzhe KangShaloo RakhejaWenjuan Zhu

electronic materialssemiconductor devicestransistor footprinttransistor polarityelectronicsbeyond cmossemiconductorselectrical engineeringmicroelectronicsapplied physicscontrol-gate-free reconfigurable transistor

Effect of High Temperature on the Performance of Algan/Gan T-Gate High-Electron Mobility Transistors With ~140-Nm Gate Length. IEEE Transactions on Electron Devices (2024)

Ahmad E. IslamNicholas P. SepelakAdam T. MiesleHanwool LeeMichael SnureStefan NikodemskiDennis E. WalkerNicholas C. MillerMatt GrupenKevin D. LeedyKyle J. LiddyAntonio CrespoGary R. HughesWenjuan ZhuBrian PolingStephen TetlakKelson D. ChabakAndrew J. Green

gan power devicerf semiconductorelectronic materials~140-nm gate lengthhigh temperaturesolid-state electronicselectronicssemiconductorselectrical engineeringmicroelectronicswide-bandgap semiconductorsperformance degradationapplied physicsaluminum gallium nitrideengineering

Modeling of Content Addressable Memory Using 2D Reconfigurable Transistors. (2024)

Ashwin TungaJunzhe KangZiing ZhaoAnkit ShuklaWenjuan ZhuShaloo Rakheja

memory architecturescomputer engineeringcontent addressable memoryintegrated circuitssemiconductorselectrical engineeringmicroelectronicsmemory devicesvlsi circuit

Progress and Challenges in the Synthesis of Two-Dimensional Van Der Waals Ferroic Materials and Heterostructures. Journal of Physics D Applied Physics (2024)

Jia WangJunzhe KangStasiu ChyczewskiYe LinHanwool LeeWenjuan ZhuXia Hong

thin filmsmaterials sciencematerial chemistrytransition metal chalcogenidessample stabilityquantum heterostructureslow dimensional materialselectronic materialsmaterial researchcrystal researchcondensed matterapplied physicsnanotechnologytopological heterostructurescomprehensive surveyfunctional materialschemistryadvanced functional materialscondensed matter physicslayered materialsquantum materials

Stable High Temperature Operation of P-Gan Gate Hemt With Etch-Stop Layer. IEEE Electron Device Letters (2024)

Hanwool LeeHojoon RyuJunzhe KangWenjuan Zhu

gan power devicestable logic operationelectronic materialssemiconductor devicesp-gan gate hemtcondensed matter physicsnanoelectronicssolid-state electronicselectronicssemiconductorselectrical engineeringmicroelectronicswide-bandgap semiconductorsapplied physicsetch-stop layeraluminum gallium nitride

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Wenjuan Zhu

Associate Professor

UIUC

Affiliations

The Grainger College of Engineering

Department of Electrical and Computer Engineering

Electrical & Computer Engineering

Wenjuan Zhu is currently serving as an Electrical And Computer Engineering Associate Professor at Uiuc.

Honors

Create free account to unlock more features

Experiences

Create free account to unlock more features

Education

Create free account to unlock more features

Wenjuan Zhu

UIUC

Associate Professor

You can click a keyword to filter the displayed items

Notable Scholarly Works

Notable Federal Grants

Collaborators

Magnetic Proximity Effects in Iron Germanium Telluride/Platinum Heterostructures. ACS Applied Materials & Interfaces (2025)

Stasiu T. ChyczewskiSuji ParkWenjuan Zhu

Non-Volatile Reconfigurable Four-Mode Van Der Waals Transistors and Transformable Logic Circuits. ACS Nano (2025)

Junzhe KangHanwool LeeAshwin TungaXiaotong XuYe LinZijing ZhaoHojoon RyuChun-Chia TsaiTakashi TaniguchiKenji WatanabeShaloo RakhejaWenjuan Zhu

Single‐Step Synthesis of in‐Plane 1T'‐2H Heterophase Mote 2 for Low‐Resistance Contacts. Advanced Functional Materials (2025)

Ye LinHanwool LeeJunzhe KangZhiyu WangRichard T. HaaschStasiu T. ChyczewskiZetai LiuHuai‐Chung ChuangJun‐Fei ZhengWenjuan Zhu

Strong Damping-Like Torques in Wafer-Scale Mote 2 Grown by Mocvd. ACS Applied Materials & Interfaces (2025)

Stasiu T. ChyczewskiHanwool LeeShuchen LiMarwan EladlJun-Fei ZhengAxel HoffmannWenjuan Zhu

Content-Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing. ACS Nano (2024)

Zijing ZhaoJunzhe KangAshwin TungaHojoon RyuAnkit ShuklaShaloo RakhejaWenjuan Zhu

microarchitecturecomputer engineeringcomputer architectureintegrated circuitsin-memory computingcam cellselectrical engineeringsingle transistoremerging memory technologiesvlsi circuit

Control-Gate-Free Reconfigurable Transistor Based on 2D Mote2 With Asymmetric Gating. Applied Physics Letters (2024)

Zijing ZhaoJunzhe KangShaloo RakhejaWenjuan Zhu

Effect of High Temperature on the Performance of Algan/Gan T-Gate High-Electron Mobility Transistors With ~140-Nm Gate Length. IEEE Transactions on Electron Devices (2024)

Modeling of Content Addressable Memory Using 2D Reconfigurable Transistors. (2024)

Ashwin TungaJunzhe KangZiing ZhaoAnkit ShuklaWenjuan ZhuShaloo Rakheja

memory architecturescomputer engineeringcontent addressable memoryintegrated circuitssemiconductorselectrical engineeringmicroelectronicsmemory devicesvlsi circuit

Progress and Challenges in the Synthesis of Two-Dimensional Van Der Waals Ferroic Materials and Heterostructures. Journal of Physics D Applied Physics (2024)

Jia WangJunzhe KangStasiu ChyczewskiYe LinHanwool LeeWenjuan ZhuXia Hong

Stable High Temperature Operation of P-Gan Gate Hemt With Etch-Stop Layer. IEEE Electron Device Letters (2024)

Hanwool LeeHojoon RyuJunzhe KangWenjuan Zhu

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