Faculty

Institution

Unit

Venue

Umesh Mishra

Dean of the College of Engineering Richard A Auhll Professor

University of California, Santa Cruz

Affiliations

Baskin School of Engineering

Electrical and Computer Engineering

Umesh Mishra is currently serving as a Baskin School Of Engineering Dean of the College of Engineering Richard A Auhll Professor at University of California, Santa Cruz.

Honors

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Experiences

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Education

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Umesh Mishra

University of California, Santa Cruz

Dean of the College of Engineering Richard A Auhll Professor

You can click a keyword to filter the displayed items

materials science optoelectronics solid-state electronics semiconductors electronics electronic materials aluminum gallium nitride microelectronics applied physics electrical engineering thin films semiconductor devices semiconductor technology power electronics gan power device technology semiconductor nanostructures surface science vlsi technology printed electronics condensed matter physics compound semiconductors microwave technology materials engineering nanotechnology power semiconductor devices wide-bandgap semiconductors semiconductor device fabrication material chemistry mechanical science condensed matter electronic packaging material research microwave engineering semiconductor materials epitaxial growth multilayer heterostructures molecular beam epitaxy luminescence composite science crystal growth microelectronics reliability intermittently connected device categoryiii-v semiconductor millimeter wave technology solid-state physics charge transport additive manufacturing organic electronics applied chemistry rf semiconductor solid-state chemistry electronic engineering vacuum device surface reactivity industrial electronics aluminium nitride radio frequency gallium nitride n-polar gan defect formation gallium oxide lateral epitaxial overgrowth surface passivation gan films electron transport porous gan algan-gan hemts power performance breakdown voltage electron mobility n-polar gan films gan hemts high linearity mg-doped gan sapphire substrate

Notable Scholarly Works

Notable Federal Grants

Collaborators

Schottky Barrier Gate N-Polar Gan-On-Sapphire Deep Recess Hemt With Record 10.5 Db Linear Gain and 50.2% Pae at 94 Ghz. IEEE Microwave and Wireless Technology Letters (2024)

E AksoH CollinsK KhanB WangW LiC ClymoreE KayedeW Liu...

solid-state electronicscomputational electromagneticsdigital signal processingsystems engineeringoptoelectronicsdb linear gainmicrowave engineeringmicrowave technologyelectronicselectrical engineeringaluminum gallium nitridemillimeter wave technologyvlsi technologyaerospace engineeringasic implementationradio frequencypower electronicssemiconductorsmicroelectronics

Compact Modeling of N-Polar Gan Hemts for Intermodulation Distortion in Millimeter-Wave Bands. IEEE Transactions on Microwave Theory and Techniques (2023)

Rohit R. KarnatyPawana ShresthaMatthew GuidryBrian RomanczykUmesh K. MishraJames F. Buckwalter

solid-state electronicscomputational electromagneticsmillimeter-wave bandscompact modelingengineeringoptoelectronicssemiconductorsmicrowave engineeringmicrowave technologygan power deviceelectrical engineeringaluminum gallium nitrideintermodulation distortionradio frequencypower electronicselectronicsn-polar ganmicroelectronicsmaterials science

First Comparison of Active and Passive Load Pull at W-Band. (2023)

CJ ClymoreE AksoM GuidryH CollinsW LiuC WurmN Hatui...

First Demonstration of Four-Finger N-Polar Gan Hemt Exhibiting Record 712-Mw Output Power With 31.7% Pae at 94 Ghz. IEEE Microwave and Wireless Technology Letters (2023)

E AksoH CollinsC ClymoreW LiM GuidryB RomanczykC Wurm...

computational electromagneticsoptoelectronicspower semiconductor devicessemiconductorsphotonicsmicrowave engineeringmicrowave technologylightwave technologygan power devicefirst demonstrationelectrical engineeringmillimeter wave technologyvlsi technologyoutput powerradio frequencypower electronicselectronicsapplied physicsmicroelectronicsmaterials science

Gate-Tunable Superconductor-Semiconductor Parametric Amplifier. Physical Review Applied (2023)

D. PhanP. Falthansl-ScheineckerU. MishraW.M. StricklandD. LangoneJ. ShabaniA.P. Higginbotham

physicsapplied physicssuperconductivity

Improved Wall-Plug Efficiency of III-Nitride Tunnel Junction Micro-Light-Emitting Diodes With Algan/Gan Polarization Charges. AIP Advances (2023)

Matthew S. WongAditya RajHsun-Ming ChangVincent RienziFeng WuJacob J. EwingEmily S. TrageserStephen GeeNathan C. PalmquistPhilip ChanJi Hun KangJames S. SpeckUmesh K. MishraShuji NakamuraSteven P. DenBaars

solid-state electronicswall-plug efficiencyelectronicssemiconductor devicesengineeringsemiconductor nanostructuresgan power deviceoptoelectronicselectronic materialselectrical engineeringaluminum gallium nitridealuminium nitridesemiconductorsphotovoltaicsmicroelectronicsmaterials science

Record 1 W Output Power From a Single N-Polar Gan Mishemt at 94 Ghz. (2023)

Emre AksoChristopher ClymoreWenjian LiuHenry CollinsBrian RomanczykWeiyi LiNirupam HatuiChristian WurmStacia KellerMatthew GuidryUmesh K. Mishra

solid-state electronicselectronicsgan power deviceengineeringoptoelectronicspower semiconductor deviceselectronic materialselectrical engineeringpower electronicsaluminum gallium nitridesemiconductorsthin filmsmicroelectronicsmaterials science

Record Rf Power Performance at 94 Ghz From Millimeter-Wave N-Polar Gan-On-Sapphire Deep-Recess Hemts. IEEE Transactions on Electron Devices (2023)

Weiyi LiBrian RomanczykMatthew GuidryEmre AksoNirupam HatuiChristian WurmWenjian LiuPawana ShresthaHenry CollinsChristopher ClymoreStacia KellerUmesh K. Mishra

semiconductor devicesoptoelectronicselectrical engineeringpower electronicsaluminum gallium nitrideelectronicsmicroelectronics

1200V Gan Switches on Sapphire: A Low-Cost, High-Performance Platform for Ev and Industrial Applications. 2022 International Electron Devices Meeting (IEDM) (2022)

G. GuptaM. KanamuraB. SwensonC. NeufeldT. HosodaP. ParikhR. LalU. Mishra

industrial applicationssolid-state electronicselectronicselectric vehiclestechnologyelectronic engineeringoptoelectronicspower semiconductor devicesdevice integrationelectrical engineeringhigh-performance platformpower electronicssemiconductorsmicroelectronicsmaterials science

1200V Gan Switches on Sapphire Substrate. International Symposium on Power Semiconductor Devices and IC's (2022)

G. GuptaM. KanamuraB. SwensonD. BisiB. RomanczykC. NeufeldS. WieneckeT. OginoY. MiyazakiK. ImanishiJ. IkedaM. KamiyamaJ. GuerreroM. LabrecqueR. PrejdovaB. CruseJ. McKayG. BolanteZ. WangT. HosodaY. WuP. ParikhR. LalU. Mishra

solid-state electronicsnanotechnologyelectronic materialshigh voltage engineeringsapphire substrateoptoelectronicsgan switchessemiconductorssurface sciencegan power deviceelectrical engineeringaluminum gallium nitridenovel interfacevlsi technologysurface reactivitytechnologypower electronicselectronicsmicroelectronicsmaterials science

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Umesh Mishra

Dean of the College of Engineering Richard A Auhll Professor

University of California, Santa Cruz

Affiliations

Baskin School of Engineering

Electrical and Computer Engineering

Umesh Mishra is currently serving as a Baskin School Of Engineering Dean of the College of Engineering Richard A Auhll Professor at University of California, Santa Cruz.

Honors

Create free account to unlock more features

Experiences

Create free account to unlock more features

Education

Create free account to unlock more features

Umesh Mishra

University of California, Santa Cruz

Dean of the College of Engineering Richard A Auhll Professor

You can click a keyword to filter the displayed items

Notable Scholarly Works

Notable Federal Grants

Collaborators

Schottky Barrier Gate N-Polar Gan-On-Sapphire Deep Recess Hemt With Record 10.5 Db Linear Gain and 50.2% Pae at 94 Ghz. IEEE Microwave and Wireless Technology Letters (2024)

E AksoH CollinsK KhanB WangW LiC ClymoreE KayedeW Liu...

Compact Modeling of N-Polar Gan Hemts for Intermodulation Distortion in Millimeter-Wave Bands. IEEE Transactions on Microwave Theory and Techniques (2023)

Rohit R. KarnatyPawana ShresthaMatthew GuidryBrian RomanczykUmesh K. MishraJames F. Buckwalter

First Comparison of Active and Passive Load Pull at W-Band. (2023)

CJ ClymoreE AksoM GuidryH CollinsW LiuC WurmN Hatui...

First Demonstration of Four-Finger N-Polar Gan Hemt Exhibiting Record 712-Mw Output Power With 31.7% Pae at 94 Ghz. IEEE Microwave and Wireless Technology Letters (2023)

E AksoH CollinsC ClymoreW LiM GuidryB RomanczykC Wurm...

Gate-Tunable Superconductor-Semiconductor Parametric Amplifier. Physical Review Applied (2023)

D. PhanP. Falthansl-ScheineckerU. MishraW.M. StricklandD. LangoneJ. ShabaniA.P. Higginbotham

physicsapplied physicssuperconductivity

Improved Wall-Plug Efficiency of III-Nitride Tunnel Junction Micro-Light-Emitting Diodes With Algan/Gan Polarization Charges. AIP Advances (2023)

Record 1 W Output Power From a Single N-Polar Gan Mishemt at 94 Ghz. (2023)

Emre AksoChristopher ClymoreWenjian LiuHenry CollinsBrian RomanczykWeiyi LiNirupam HatuiChristian WurmStacia KellerMatthew GuidryUmesh K. Mishra

Record Rf Power Performance at 94 Ghz From Millimeter-Wave N-Polar Gan-On-Sapphire Deep-Recess Hemts. IEEE Transactions on Electron Devices (2023)

Weiyi LiBrian RomanczykMatthew GuidryEmre AksoNirupam HatuiChristian WurmWenjian LiuPawana ShresthaHenry CollinsChristopher ClymoreStacia KellerUmesh K. Mishra

semiconductor devicesoptoelectronicselectrical engineeringpower electronicsaluminum gallium nitrideelectronicsmicroelectronics

1200V Gan Switches on Sapphire: A Low-Cost, High-Performance Platform for Ev and Industrial Applications. 2022 International Electron Devices Meeting (IEDM) (2022)

G. GuptaM. KanamuraB. SwensonC. NeufeldT. HosodaP. ParikhR. LalU. Mishra

1200V Gan Switches on Sapphire Substrate. International Symposium on Power Semiconductor Devices and IC's (2022)

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