Faculty

Institution

Unit

Venue

Umesh Mishra

Dean

University of California, Santa Barbara

Affiliations

College of Engineering

Electrical and Computer Engineering

Umesh Mishra is currently serving as a College Of Engineering Dean at University of California, Santa Barbara.

Honors

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Experiences

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Education

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Umesh Mishra

University of California, Santa Barbara

Dean

You can click a keyword to filter the displayed items

materials science optoelectronics semiconductors solid-state electronics electronics electronic materials microelectronics aluminum gallium nitride electrical engineering applied physics thin films semiconductor devices semiconductor technology gan power device power electronics technology semiconductor nanostructures surface science vlsi technology condensed matter physics printed electronics microwave technology wide-bandgap semiconductors compound semiconductors nanotechnology materials engineering power semiconductor devices semiconductor device fabrication material chemistry condensed matter electronic packaging material research mechanical science microwave engineering semiconductor materials luminescence epitaxial growth molecular beam epitaxy multilayer heterostructures categoryiii-v semiconductor composite science intermittently connected device crystal growth solid-state physics microelectronics reliability millimeter wave technology organic electronics charge transport fragmentation effect rf semiconductor solid-state chemistry industrial electronics electronic engineering applied chemistry vacuum device additive manufacturing gallium oxide aluminium nitride surface reactivity n-polar gan radio frequency gallium nitride lateral epitaxial overgrowth surface passivation electron transport first demonstration gan hemts porous gan gan films sapphire substrate n-polar gan mis-hemts breakdown voltage plasma-assisted molecular-beam epitaxy electrical characterization algan-gan hemts electron mobility

Video Presentations

Notable Scholarly Works

Notable Federal Grants

Collaborators

Bias-Insensitive High Linearity of N-Polar Deep Recess Gan Hemts With Regrown Gan Cap. IEEE Electron Device Letters (2026)

semiconductor technologyaluminum gallium nitrideelectronicswide-bandgap semiconductorsregrown gan capapplied physicssemiconductorsquantum heterostructuresbias-insensitive high linearitygan power deviceelectrical engineeringelectronic materials

N-Polar Gan Hemt With Deep Wet Etched Recess Demonstrating Record G-Band Performance at 170 Ghz. IEEE Electron Device Letters (2026)

n-polar gan hemtcategoryiii-v semiconductoraluminum gallium nitrideelectronicswide-bandgap semiconductorsoptoelectronicsapplied physicssemiconductorssolid-state electronicsmicrowave technologygan power deviceelectrical engineeringelectronic materials

A New S-Parameter Deep Level Transient Spectroscopy (S-Dlts) Method: Development and Qualification. (2025)

spectroscopic methodsoptical spectroscopymeasurementinstrumentationspectroscopyatomic spectroscopytransient imagingapplied physicsanalytical atomic spectrometryelectrical engineering

Gallium Nitride: Past, Present and Future in an Ever-Changing Market. (2025)

materials sciencephysicsgallium nitridealuminum gallium nitrideelectronicswide-bandgap semiconductorsoptoelectronicsgallium oxideapplied physicsadvanced materialssemiconductorssolid-state electronicscategoryiii-v semiconductorelectronic materials

High- Q, Size-Independent, and Reconfigurable Optical Antennas Embedded in Zero-Index Cavities. ACS Nano (2025)

physicsmetamaterialsoptoelectronicscavity qedphotonicsantennasapplied physicsmicrowave technology

Integration of 150 Nm Gate Length N-Polar Gan Mis-Hemt Devices With All-Around Diamond for Device-Level Cooling. Applied Physics Express (2025)

nanoelectronicsaluminum gallium nitrideengineeringelectronicswide-bandgap semiconductorsall-around diamondapplied physicssemiconductorsdevice-level coolinggan power deviceelectrical engineeringelectronic materials

Mocvd Growth of Relaxed, Crack-Free Algan on Tiled Gan Substrates. Crystals (2025)

materials sciencesemiconductorscategoryiii-v semiconductoraluminum gallium nitridemocvd growthelectronicswide-bandgap semiconductorsmaterials engineeringoptoelectronicsapplied physicsmicroelectronicsthin filmssolid-state electronicsgan power deviceelectrical engineeringelectronic materials

N-Polar Gallium Nitride Doping by Atomic Layer Deposition for Improved Electrical Performance. Applied Physics Letters (2025)

atomic layer depositionmaterials sciencesemiconductorsaluminum gallium nitrideelectronicswide-bandgap semiconductorsmaterials engineeringn-polar galliummaterial researchapplied physicsimproved electrical performancethin filmssolid-state electronicselectrical engineeringelectronic materials

Optimizing Tin/Ru Schottky Contacts for N‐Polar Gan. Electronics Letters (2025)

categoryiii-v semiconductoraluminum gallium nitrideelectronicsoptoelectronicsapplied physicsn‐polar gansemiconductorssolid-state electronicsgan power deviceelectrical engineeringelectronic materials

Quantitative Analysis of Leakage Current in III-Nitride Micro-Light-Emitting Diodes. Applied Physics Letters (2025)

solid-state lightingelectronicswide-bandgap semiconductorsoptoelectronicsquantitative analysismicroelectronicsapplied physicssemiconductorssolid-state electronicselectrical engineeringelectronic materials

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Umesh Mishra

Dean

University of California, Santa Barbara

Affiliations

College of Engineering

Electrical and Computer Engineering

Umesh Mishra is currently serving as a College Of Engineering Dean at University of California, Santa Barbara.

Honors

Create free account to unlock more features

Experiences

Create free account to unlock more features

Education

Create free account to unlock more features

Umesh Mishra

University of California, Santa Barbara

Dean

You can click a keyword to filter the displayed items

Video Presentations

Notable Scholarly Works

Notable Federal Grants

Collaborators

Bias-Insensitive High Linearity of N-Polar Deep Recess Gan Hemts With Regrown Gan Cap. IEEE Electron Device Letters (2026)

N-Polar Gan Hemt With Deep Wet Etched Recess Demonstrating Record G-Band Performance at 170 Ghz. IEEE Electron Device Letters (2026)

A New S-Parameter Deep Level Transient Spectroscopy (S-Dlts) Method: Development and Qualification. (2025)

spectroscopic methodsoptical spectroscopymeasurementinstrumentationspectroscopyatomic spectroscopytransient imagingapplied physicsanalytical atomic spectrometryelectrical engineering

Gallium Nitride: Past, Present and Future in an Ever-Changing Market. (2025)

High- Q, Size-Independent, and Reconfigurable Optical Antennas Embedded in Zero-Index Cavities. ACS Nano (2025)

physicsmetamaterialsoptoelectronicscavity qedphotonicsantennasapplied physicsmicrowave technology

Integration of 150 Nm Gate Length N-Polar Gan Mis-Hemt Devices With All-Around Diamond for Device-Level Cooling. Applied Physics Express (2025)

Mocvd Growth of Relaxed, Crack-Free Algan on Tiled Gan Substrates. Crystals (2025)

N-Polar Gallium Nitride Doping by Atomic Layer Deposition for Improved Electrical Performance. Applied Physics Letters (2025)

Optimizing Tin/Ru Schottky Contacts for N‐Polar Gan. Electronics Letters (2025)

Quantitative Analysis of Leakage Current in III-Nitride Micro-Light-Emitting Diodes. Applied Physics Letters (2025)

1
2
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5
110
10 / page

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