Faculty

Institution

Unit

Venue

Mary Ellen Zvanut

Professor

University of Alabama at Birmingham

Affiliations

College of Arts and Sciences

Physics

Mary Ellen Zvanut is currently serving as a College Of Arts And Sciences Professor at University of Alabama At Birmingham.

Honors

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Experiences

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Education

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Mary Ellen Zvanut

University of Alabama at Birmingham

Professor

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materials science applied physics electronic materials thin films semiconductors solid-state electronics optoelectronics condensed matter physics electrical engineering physics microelectronics electronics surface science materials engineering aluminum gallium nitride condensed matter defect formation material research power electronics particle physics semiconductor technology material chemistry semiconductor materials semiconductor devices semiconductor nanostructures gan power device point defects printed electronics thermal engineering solid-state physics electron paramagnetic resonance organic electronics compound semiconductors intrinsic defects solid-state chemistry mg acceptor composite science transition metal chemistry surface reactivity silicon dioxide films metals gallium oxide defect tolerance charge transport oxide electronics optical engineering aluminium nitride mg acceptors nuclear materials charge separation novel interface carbon-based materials epitaxial growth laser science fragmentation effect ion implantation optical transitions energy storage materials crystal growth nuclear science advanced energy material thin film processing nuclear engineering photoluminescence surface chemistry silicon on insulator paramagnetic centers acceptor level oxidized sic nitrogen density interface states hole traps electron traps insulator-semiconductor tunneling franck-condon relaxation level position

Notable Scholarly Works

Notable Federal Grants

Collaborators

Ultraviolet Absorption of Point Defects in High Purity Bulk Aln. AIP Advances (2025)

physicsmaterial researchaluminium nitridesemiconductorsapplied physicsmaterials science

Assignments of Vibrational Lines to Od-Impurity Complexes for Adventitious Impurities in β-Ga2o3. APL Materials (2024)

Andrew VenzieMichael StavolaW. Beall FowlerEvan R. GlaserMarko J. TadjerJason I. ForbusMary Ellen ZvanutStephen J. Pearton

advanced materialsod-impurity complexesvibrational linesadventitious impuritiesmaterials science

Direct Evidence for Carbon Incorporation on the Nitrogen Site in Aln. Physical Review Materials (2024)

Darshana WickramaratneMackenzie SifordMd Shafiqul Islam MollikJohn L. LyonsM. E. Zvanut

trace metalselectronic materialscarbon incorporationenergy storage materialsparticle physicselectrochemical engineeringtrace element geochemistrydirect evidencealuminium nitridethin filmsinorganic chemistrynitrogen sitechemical engineeringsurface sciencematerial chemistrycarbon-based materialsinorganic compoundstransition metal chemistryadvanced energy materialapplied physicsmaterials science

Photo-Induced Electron Paramagnetic Resonance: A Means to Identify Defects and the Defect Level Throughout the Bandgap of Ultrawide Bandgap Semiconductors. Applied Physics Letters (2024)

M. E. ZvanutMd Shafiqul Islam MollikMackenzie SifordSuman Bhandari

defect levelsolid-state electronicsdefect formationphysicsoptoelectronicselectron microscopyelectronic materialssemiconductorsapplied physicsultrawide bandgap semiconductorscondensed matter physicsmaterials scienceelectron paramagnetic resonance

An Electron Paramagnetic Resonance Study of the Electron Transport in Heavily Si-Doped High Al Content Alxga1−Xn. AIP Advances (2023)

M. E. ZvanutJackson P. HanleSubash PaudelRyan PageChandrashekhar SavantYongjin ChoH. Grace XingDebdeep Jena

wide-bandgap semiconductorssolid-state electronicselectronicsphysicscondensed mattersemiconductor technologyelectron configurationelectrical engineeringcharacterization (materials science)electronic materialsaluminium nitridealuminum gallium nitrideelectron transportsemiconductorsmagnetic resonanceapplied physicselectron paramagnetic resonance

Optical, Electrical, and Epr Studies of Polycrystalline Al: Cr: Znse Gain Elements. Optical Materials Express (2023)

R. WatkinsV. V. FedorovM. E. ZvanutS. BhandariY. BarnakovS. B. Mirov

photonicsepr studiesoptoelectronicsoptical materialselectrical engineeringoptical engineeringapplied physicsmaterials scienceelectron paramagnetic resonance

Compensating Defects in High Al Content Al 0.85 Ga 0.15 N Films Grown on an Aln Substrate. (2022)

M.E. ZvanutSubash PaudelRyan PageYongjin ChoH. Grace XingDebdeep Jena

solid-state electronicselectronic materialswide-bandgap semiconductorscondensed matterquantum materialscharacterization (materials science)aluminium nitridesemiconductor materialsthin filmscondensed matter physicssemiconductorsimpurity band conductionmaterials engineeringelectrical engineeringother point defectsdefect formationsi dopingelectronicsapplied physicsmaterials science

Optical Transitions of Gallium Vacancies in Neutron Irradiated β -Ga2o3. Journal of Applied Physics (2022)

Suman BhandariClaudia NardoneM. E. Zvanut

solid-state electronicsphysicsgallium oxideradiation generationatomic physicsnuclear materialsoptoelectronicsneutron scatteringelectronic materialsgallium vacanciesoptical transitionsaluminum gallium nitridesemiconductorsradiationapplied physicsthin filmsmaterials science

Optical Transitions of Neutral Mg in Mg-Doped β -Ga2o3. APL Materials (2022)

Suman BhandariJohn L. LyonsDarshana WickramaratneM. E. Zvanut

advanced materialsoptical transitionsoptical materialsneutral mgapplied physicsmaterials sciencemagnesium alloys

Carbon Complexes in Highly C-Doped Gan. Physical review. B./Physical review. B (2021)

John L. LyonsEvan R. GlaserMary Ellen ZvanutSubash PaudelMalgorzata IwinskaTomasz SochackiMichal Bockowski

inorganic chemistrysolid-state electronicsparticle physicsadvanced materialsphysicscarbon complexeselectronic materialschemistryaluminum gallium nitridec-doped gansemiconductorsthin filmsmaterials science

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Mary Ellen Zvanut

Professor

University of Alabama at Birmingham

Affiliations

College of Arts and Sciences

Physics

Mary Ellen Zvanut is currently serving as a College Of Arts And Sciences Professor at University of Alabama At Birmingham.

Honors

Create free account to unlock more features

Experiences

Create free account to unlock more features

Education

Create free account to unlock more features

Mary Ellen Zvanut

University of Alabama at Birmingham

Professor

You can click a keyword to filter the displayed items

Notable Scholarly Works

Notable Federal Grants

Collaborators

Ultraviolet Absorption of Point Defects in High Purity Bulk Aln. AIP Advances (2025)

physicsmaterial researchaluminium nitridesemiconductorsapplied physicsmaterials science

Assignments of Vibrational Lines to Od-Impurity Complexes for Adventitious Impurities in β-Ga2o3. APL Materials (2024)

Andrew VenzieMichael StavolaW. Beall FowlerEvan R. GlaserMarko J. TadjerJason I. ForbusMary Ellen ZvanutStephen J. Pearton

advanced materialsod-impurity complexesvibrational linesadventitious impuritiesmaterials science

Direct Evidence for Carbon Incorporation on the Nitrogen Site in Aln. Physical Review Materials (2024)

Darshana WickramaratneMackenzie SifordMd Shafiqul Islam MollikJohn L. LyonsM. E. Zvanut

Photo-Induced Electron Paramagnetic Resonance: A Means to Identify Defects and the Defect Level Throughout the Bandgap of Ultrawide Bandgap Semiconductors. Applied Physics Letters (2024)

M. E. ZvanutMd Shafiqul Islam MollikMackenzie SifordSuman Bhandari

An Electron Paramagnetic Resonance Study of the Electron Transport in Heavily Si-Doped High Al Content Alxga1−Xn. AIP Advances (2023)

M. E. ZvanutJackson P. HanleSubash PaudelRyan PageChandrashekhar SavantYongjin ChoH. Grace XingDebdeep Jena

Optical, Electrical, and Epr Studies of Polycrystalline Al: Cr: Znse Gain Elements. Optical Materials Express (2023)

R. WatkinsV. V. FedorovM. E. ZvanutS. BhandariY. BarnakovS. B. Mirov

photonicsepr studiesoptoelectronicsoptical materialselectrical engineeringoptical engineeringapplied physicsmaterials scienceelectron paramagnetic resonance

Compensating Defects in High Al Content Al 0.85 Ga 0.15 N Films Grown on an Aln Substrate. (2022)

M.E. ZvanutSubash PaudelRyan PageYongjin ChoH. Grace XingDebdeep Jena

Optical Transitions of Gallium Vacancies in Neutron Irradiated β -Ga2o3. Journal of Applied Physics (2022)

Suman BhandariClaudia NardoneM. E. Zvanut

Optical Transitions of Neutral Mg in Mg-Doped β -Ga2o3. APL Materials (2022)

Suman BhandariJohn L. LyonsDarshana WickramaratneM. E. Zvanut

advanced materialsoptical transitionsoptical materialsneutral mgapplied physicsmaterials sciencemagnesium alloys

Carbon Complexes in Highly C-Doped Gan. Physical review. B./Physical review. B (2021)

John L. LyonsEvan R. GlaserMary Ellen ZvanutSubash PaudelMalgorzata IwinskaTomasz SochackiMichal Bockowski

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