Faculty

Institution

Unit

Venue

Eugene A. Fitzgerald

SMA Professor; Professor of Materials Science and Engineering; CEO and Director Singapore-MIT Alliance for Research and Technology

Massachusetts Institute of Technology

Affiliations

School of Engineering

Materials Science and Engineering

Eugene A. Fitzgerald is currently serving as a Materials Science And Engineering SMA Professor; Professor of Materials Science and Engineering; CEO and Director Singapore-MIT Alliance for Research and Technology at Massachusetts Institute of Technology.

Honors

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Experiences

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Education

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Eugene A. Fitzgerald

Massachusetts Institute of Technology

SMA Professor; Professor of Materials Science and Engineering; CEO and Director Singapore-MIT Alliance for Research and Technology

You can click a keyword to filter the displayed items

Notable Scholarly Works

Notable Federal Grants

Collaborators

Design and Comparison of Fully Integrated MM-Wave Gaas Power Amplifiers Using Physics-Based Compact Model. (2025)

microelectronicselectrical engineeringelectronic engineeringsemiconductorselectronicspower electronicsintegrated circuitsmicrowave technology

Layer-Transferred Gallium Arsenide Heterojunction Bipolar Transistor on Insulator Substrate. Materials Science and Engineering B (2023)

Loke Wan KhaiWang YueXie HanlinTan Hui TengBao ShuyuLee Kwang HongKhaw LinaKenneth Lee Eng KianTan Chuan SengNg Geok IngEugene A. FitzgeraldYoon Soon Fatt

microelectronicssemiconductor deviceselectronicsmaterials engineeringelectrical engineeringsemiconductorspower electronicssolid-state electronicselectronic materialsadvanced materialselectronic engineeringsemiconductor technologysemiconductor device fabricationmaterials sciencematerial researchoptoelectronicsinsulator substratecompound semiconductorsmechanical engineering

Design of 20-28 Ghz Gaas Phase Shifter Mmic and Small Signal Validation Using Mvs-Gaas Model. (2022)

Pilsoon ChoiRyan FangLan WeiSlim BoumaizaUjwal RadhakrishnaEugene Fitzgerald

systems engineeringvlsi designmicroelectronicsengineeringelectrical engineeringmvs-gaas modelsmall signal validationsemiconductorspower electronicsmicrowave technology

Freestanding High-Resolution Quantum Dot Color Converters With Small Pixel Sizes. ACS Applied Materials & Interfaces (2022)

Saurabh SrivastavaKenneth E. LeeEugene A. FitzgeraldStephen J. PennycookSilvija Gradečak

interface sciencesmall pixel sizesadvanced materialsengineeringoptoelectronicsphotonicsquantum dotsapplied physicsmaterials sciencenanomaterialsmaterial research

In0.3Ga0.7As Heterojunction Bipolar Transistor Grown on Gesi Substrate for High-Frequency Application. Materials Science in Semiconductor Processing (2022)

Wan Khai LokeYue WangYu GaoLina KhawKenneth Eng Kian LeeChuan Seng TanEugene A. FitzgeraldSoon Fatt Yoon

aluminum gallium nitridemicroelectronicselectrical engineeringhigh-frequency applicationoptoelectronicssemiconductorsmaterials engineeringelectronicssemiconductor devicescompound semiconductorssemiconductor technologysemiconductor nanostructuresapplied physicsmaterials sciencegesi substratematerial researchsolid-state electronics

A Review of Silicon-Based Wafer Bonding Processes, an Approach to Realize the Monolithic Integration of Si-Cmos and III–V-On-Si Wafers. Journal of Semiconductors (2021)

Shuyu BaoYue WangKhaw LinaLi ZhangBing WangWardhana Aji SasangkaKenneth Eng Kian LeeSoo Jin ChuaJurgen MichelEugene FitzgeraldChuan Seng TanKwang Hong Lee

electronic materialsmicroelectronicsengineeringelectrical engineeringdevice integrationoptoelectronicssemiconductorselectronicssemiconductor technologysemiconductor devicessemiconductor device fabricationcompound semiconductorssilicon-based wafer bondingiii-v-on-si wafersmaterials sciencevlsi technologymonolithic integrationsolid-state electronics

Cmos-Compatible Ti/Tin/Al Refractory Ohmic Contact for Gaas Heterojunction Bipolar Transistors Grown on Ge/Si Substrate. IEEE Transactions on Electron Devices (2021)

Yue WangWan Khai LokeYu GaoKwang Hong LeeKenneth Eng Kian LeeChee Lip GanChuan Seng TanEugene A. FitzgeraldSoon Fatt Yoon

electronic materialsthin filmssemiconductor materialselectrical engineeringmicroelectronicsoptoelectronicssemiconductorselectronicspower electronicselectronic packagingsemiconductor devicescompound semiconductorssemiconductor technologyapplied physicsmaterials scienceprinted electronicssolid-state electronics

Light-Emitting V-Pits: An Alternative Approach Toward Luminescent Indium-Rich Ingan Quantum Dots. ACS Photonics (2021)

Jing-Yang ChungZhang LiSarah A. GoodmanJinkyu SoGovindo J. SyaranamualTara P. MishraEugene A. FitzgeraldMichel BosmanKenneth LeeStephen J. PennycookSilvija Gradečak

light-emitting v-pitsoptoelectronicsphotonicsapplied physicsmaterials scienceluminescence

Effectiveness of Ingaas/Gaas Superlattice Dislocation Filter Layers Epitaxially Grown on 200 MM Si Wafers With and Without Ge Buffers. Semiconductor Science and Technology (2020)

Bing WangGovindo Joannesha SyaranamualKwang Hong LeeShuyu BaoYue WangKenneth Eng Kian LeeEugene A FitzgeraldStephen J PennycookSilvija GradecakJurgen Michel

microelectronicssemiconductor deviceselectronicsmicrowave technologythin filmselectrical engineeringsemiconductorsepitaxial growthsolid-state electronicselectronic materialssemiconductor technologysemiconductor device fabricationge buffersapplied physicsmaterials sciencevlsi technologysurface sciencemm si wafersoptoelectronicscompound semiconductors

High-Frequency Characteristics of Ingap/Gaas Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 MM Ge/Si Wafers. IEEE Journal of the Electron Devices Society (2020)

Loke Wan KhaiWang YueLee Kwang HongLiu ZhihongXie HanlinChiah Siau BenKenneth Lee Eng KianZhou XingChuan Seng TanNg Geok IngEugene A. FitzgeraldYoon Soon Fatt

electronic materialspower semiconductor devicesmicroelectronicselectrical engineeringoptoelectronicssemiconductorspower electronicselectronicssemiconductor devicesepitaxial growthsemiconductor technologycompound semiconductorsapplied physicsmaterials sciencemicrowave technologysolid-state electronicshigh-frequency characteristics

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Eugene A. Fitzgerald

SMA Professor; Professor of Materials Science and Engineering; CEO and Director Singapore-MIT Alliance for Research and Technology

Massachusetts Institute of Technology

Affiliations

School of Engineering

Materials Science and Engineering

Honors

Create free account to unlock more features

Experiences

Create free account to unlock more features

Education

Create free account to unlock more features

Eugene A. Fitzgerald

Massachusetts Institute of Technology

SMA Professor; Professor of Materials Science and Engineering; CEO and Director Singapore-MIT Alliance for Research and Technology

You can click a keyword to filter the displayed items

Notable Scholarly Works

Notable Federal Grants

Collaborators

Design and Comparison of Fully Integrated MM-Wave Gaas Power Amplifiers Using Physics-Based Compact Model. (2025)

microelectronicselectrical engineeringelectronic engineeringsemiconductorselectronicspower electronicsintegrated circuitsmicrowave technology

Layer-Transferred Gallium Arsenide Heterojunction Bipolar Transistor on Insulator Substrate. Materials Science and Engineering B (2023)

Loke Wan KhaiWang YueXie HanlinTan Hui TengBao ShuyuLee Kwang HongKhaw LinaKenneth Lee Eng KianTan Chuan SengNg Geok IngEugene A. FitzgeraldYoon Soon Fatt

Design of 20-28 Ghz Gaas Phase Shifter Mmic and Small Signal Validation Using Mvs-Gaas Model. (2022)

Pilsoon ChoiRyan FangLan WeiSlim BoumaizaUjwal RadhakrishnaEugene Fitzgerald

systems engineeringvlsi designmicroelectronicsengineeringelectrical engineeringmvs-gaas modelsmall signal validationsemiconductorspower electronicsmicrowave technology

Freestanding High-Resolution Quantum Dot Color Converters With Small Pixel Sizes. ACS Applied Materials & Interfaces (2022)

Saurabh SrivastavaKenneth E. LeeEugene A. FitzgeraldStephen J. PennycookSilvija Gradečak

interface sciencesmall pixel sizesadvanced materialsengineeringoptoelectronicsphotonicsquantum dotsapplied physicsmaterials sciencenanomaterialsmaterial research

In0.3Ga0.7As Heterojunction Bipolar Transistor Grown on Gesi Substrate for High-Frequency Application. Materials Science in Semiconductor Processing (2022)

Wan Khai LokeYue WangYu GaoLina KhawKenneth Eng Kian LeeChuan Seng TanEugene A. FitzgeraldSoon Fatt Yoon

A Review of Silicon-Based Wafer Bonding Processes, an Approach to Realize the Monolithic Integration of Si-Cmos and III–V-On-Si Wafers. Journal of Semiconductors (2021)

Shuyu BaoYue WangKhaw LinaLi ZhangBing WangWardhana Aji SasangkaKenneth Eng Kian LeeSoo Jin ChuaJurgen MichelEugene FitzgeraldChuan Seng TanKwang Hong Lee

Cmos-Compatible Ti/Tin/Al Refractory Ohmic Contact for Gaas Heterojunction Bipolar Transistors Grown on Ge/Si Substrate. IEEE Transactions on Electron Devices (2021)

Yue WangWan Khai LokeYu GaoKwang Hong LeeKenneth Eng Kian LeeChee Lip GanChuan Seng TanEugene A. FitzgeraldSoon Fatt Yoon

Light-Emitting V-Pits: An Alternative Approach Toward Luminescent Indium-Rich Ingan Quantum Dots. ACS Photonics (2021)

Jing-Yang ChungZhang LiSarah A. GoodmanJinkyu SoGovindo J. SyaranamualTara P. MishraEugene A. FitzgeraldMichel BosmanKenneth LeeStephen J. PennycookSilvija Gradečak

light-emitting v-pitsoptoelectronicsphotonicsapplied physicsmaterials scienceluminescence

Effectiveness of Ingaas/Gaas Superlattice Dislocation Filter Layers Epitaxially Grown on 200 MM Si Wafers With and Without Ge Buffers. Semiconductor Science and Technology (2020)

Bing WangGovindo Joannesha SyaranamualKwang Hong LeeShuyu BaoYue WangKenneth Eng Kian LeeEugene A FitzgeraldStephen J PennycookSilvija GradecakJurgen Michel

High-Frequency Characteristics of Ingap/Gaas Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 MM Ge/Si Wafers. IEEE Journal of the Electron Devices Society (2020)

Loke Wan KhaiWang YueLee Kwang HongLiu ZhihongXie HanlinChiah Siau BenKenneth Lee Eng KianZhou XingChuan Seng TanNg Geok IngEugene A. FitzgeraldYoon Soon Fatt

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porous semiconductors

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transmission electron microscopy

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nanoscale system

plasmon-enhanced photovoltaics

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electronic material

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