Faculty

Institution

Unit

Venue

Diana D.L. Huffaker

Professor

University of California, Los Angeles

Affiliations

the College

California Nanosystems Institute (cnsi)

Samueli School of Engineering

Electrical and Computer Engineering

Diana D.l. Huffaker is currently serving as a California Nanosystems Institute (Cnsi) Professor at University of California, Los Angeles.

Honors

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Experiences

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Education

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Diana D.L. Huffaker

University of California, Los Angeles

Professor

You can click a keyword to filter the displayed items

optoelectronics materials science applied physics photonics nanotechnology solid-state electronics semiconductor nanostructures semiconductors electrical engineering electronics electronic materials laser science semiconductor technology microelectronics nanomaterials semiconductor devices thin films quantum dots physics optical engineering semiconductor device fabrication quantum photonics compound semiconductors nanometrology surface nanotechnology aluminum gallium nitride printed electronics semiconductor materials laser processing technology nanoparticle research lightwave technology infrared optic power electronics epitaxial growth photonic devices photoluminescence luminescence crystal growth nanoscale science nanobiotechnology oxide electronics infrared sensors intermittently connected device material research microwave technology material chemistry plasmonics inas quantum dots advanced functional materials mechanical science thermal engineering interfacial misfit arrays vertical-cavity surface-emitting lasers condensed matter molecular beam epitaxy spontaneous emission surface nanoengineering infrared spectroscopy nanostructure synthesis temperature dependence gaas substrates additive manufacturing gaas substrate vertical-cavity lasers quantum technologies room temperature bragg reflectors optical characteristics droplet epitaxy quantum photonic device quantum devices applied chemistry quantum dot lasers optical characterization tensile gaas interfacial misfit array nano energy plasmon-enhanced photovoltaics

Notable Scholarly Works

Notable Federal Grants

Collaborators

Impact Ionization Coefficients and Excess Noise in Al0.55Ga0.45As0.56Sb0.44 Lattice Matched to Inp. Applied Physics Letters (2024)

Xiao JinHarry I. J. LewisXin YiShiyu XieBaolai LiangDiana L. HuffakerChee Hing TanJohn P. R. David

materials scienceexcess noisesolid-state electronicsimpact ionization coefficientsapplied physicsoptoelectronicsaluminum gallium nitride

Effect of Interfacial Schemes on the Optical and Structural Properties of Inas/Gasb Type-II Superlattices. ACS Applied Materials & Interfaces (2023)

Dhafer AlshahraniManoj KesariaJuan J. JiménezDominic KwanVibha SrivastavaMarie DelmasFrancisco M. MoralesBaolai LiangDiana Huffaker

thin filmsmaterials sciencesemiconductor nanostructuresinterface scienceoptical propertiesmaterials engineeringstructural propertiesadvanced materialsinterfacial schemesapplied physicsoptoelectronicsinorganic materialsengineering

Predicting the Response of Lead Selenide Thin Film Photoconductor in Circuits With a Series Load Resistor. (2023)

Jasmine J. MahKhalifa M. Azizur-RahmanBaolai LiangDiana L. HuffakerJeung Hun ParkStewart MillerRichard S. KimRussell Dahl

thin filmsmaterials scienceperformance characterizationseries load resistordefect tolerancethermal engineeringsolid-state electronicselectronicssemiconductorselectrical engineeringmicroelectronicspower electronicsapplied physicsoptoelectronics

Very Low Excess Noise Al 0.75 Ga 0.25 as 0.56 Sb 0.44 Avalanche Photodiode. Optics Express (2023)

Xiao JinHarry I. J. LewisXin YiShiyu XieBaolai LiangQingyu TianDiana L. HuffakerChee Hing TanJohn P. R. David

applied physicsoptoelectronicsaluminum gallium nitridephotonics

Comparison of the Temperature Dependence of Impact Ionization Coefficients in Alassb, Inalas, and Inp. (2022)

Xiao JinShiyu XieBaolai L. LiangXin YiHarry LewisLeh Woon LimYifan LiuBeng Koon NgDiana HuffakerChee Hing TanDuu Sheng OngJohn P. R. David

thin filmsmaterials scienceparticle physicsimpact ionization coefficientstemperature dependence

Inasp Quantum Dot-Embedded Inp Nanowires Toward Silicon Photonic Applications. ACS Applied Materials & Interfaces (2022)

Ting-Yuan ChangHyunseok KimWilliam A. HubbardKhalifa M. Azizur-RahmanJung Jin JuJe-Hyung KimWook-Jae LeeDiana Huffaker

semiconductor nanostructuresmaterials scienceinterface sciencebiomedical engineeringmaterial researchsilicon photonic applicationsquantum dotsnanomaterialsapplied physicsnanotechnologyoptoelectronicssemiconductor technologyphotonics

Monolithic Integration of a 10 μM Cut-Off Wavelength Inas/Gasb Type-II Superlattice Diode on Gaas Platform. Scientific Reports (2022)

D. C. M. KwanM. KesariaJ. J. JiménezV. SrivastavaM. DelmasB. L. LiangF. M. MoralesD. L. Huffaker

thin filmsmaterials sciencesemiconductor nanostructuresgaas platformmechanical engineeringsemiconductor devicesmonolithic integrationsolid-state electronicselectronicssemiconductorselectrical engineeringmicroelectronicsoptoelectronicssemiconductor technology

Emerging Type‐II Superlattices of Inas/Inassb and Inas/Gasb for Mid‐Wavelength Infrared Photodetectors. Advanced Photonics Research (2021)

Dhafer O. AlshahraniManoj KesariaEzekiel A. AnyebeV. SrivastavaDiana L. Huffaker

materials scienceinfrared opticmid-wavelength infrared photodetectorstype-ii superlatticesoptoelectronicsphotonics

III–V Nanowires on Silicon (100) as Plasmonic-Photonic Hybrid Meta-Absorber. Scientific Reports (2021)

Hyunseok KimHaneui BaeTing-Yuan ChangDiana L. Huffaker

iii–v nanowiresadvanced functional materialsnanophotonicselectronic materialsphotonic devicesplasmonic materialshigh sensitivityinfrared photodetectorssolid-state electronicsmetamaterialselectrical engineeringlightwave technologyapplied physicsoptoelectronicsnanowiresplasmonics

Integrated and Spectrally Selective Thermal Emitters Enabled by Layered Metamaterials. Nanophotonics (2021)

Yongkang GongKang LiNigel CopnerHeng LiuMeng ZhaoBo ZhangAndreas PuschDiana L. HuffakerSang Soon Oh

materials sciencenanophotonicslayered metamaterialsnanomaterialsnanotechnologyphotonics

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Diana D.L. Huffaker

Professor

University of California, Los Angeles

Affiliations

the College

California Nanosystems Institute (cnsi)

Samueli School of Engineering

Electrical and Computer Engineering

Diana D.l. Huffaker is currently serving as a California Nanosystems Institute (Cnsi) Professor at University of California, Los Angeles.

Honors

Create free account to unlock more features

Experiences

Create free account to unlock more features

Education

Create free account to unlock more features

Diana D.L. Huffaker

University of California, Los Angeles

Professor

You can click a keyword to filter the displayed items

Notable Scholarly Works

Notable Federal Grants

Collaborators

Impact Ionization Coefficients and Excess Noise in Al0.55Ga0.45As0.56Sb0.44 Lattice Matched to Inp. Applied Physics Letters (2024)

Xiao JinHarry I. J. LewisXin YiShiyu XieBaolai LiangDiana L. HuffakerChee Hing TanJohn P. R. David

materials scienceexcess noisesolid-state electronicsimpact ionization coefficientsapplied physicsoptoelectronicsaluminum gallium nitride

Effect of Interfacial Schemes on the Optical and Structural Properties of Inas/Gasb Type-II Superlattices. ACS Applied Materials & Interfaces (2023)

Dhafer AlshahraniManoj KesariaJuan J. JiménezDominic KwanVibha SrivastavaMarie DelmasFrancisco M. MoralesBaolai LiangDiana Huffaker

Predicting the Response of Lead Selenide Thin Film Photoconductor in Circuits With a Series Load Resistor. (2023)

Jasmine J. MahKhalifa M. Azizur-RahmanBaolai LiangDiana L. HuffakerJeung Hun ParkStewart MillerRichard S. KimRussell Dahl

Very Low Excess Noise Al 0.75 Ga 0.25 as 0.56 Sb 0.44 Avalanche Photodiode. Optics Express (2023)

Xiao JinHarry I. J. LewisXin YiShiyu XieBaolai LiangQingyu TianDiana L. HuffakerChee Hing TanJohn P. R. David

applied physicsoptoelectronicsaluminum gallium nitridephotonics

Comparison of the Temperature Dependence of Impact Ionization Coefficients in Alassb, Inalas, and Inp. (2022)

Xiao JinShiyu XieBaolai L. LiangXin YiHarry LewisLeh Woon LimYifan LiuBeng Koon NgDiana HuffakerChee Hing TanDuu Sheng OngJohn P. R. David

thin filmsmaterials scienceparticle physicsimpact ionization coefficientstemperature dependence

Inasp Quantum Dot-Embedded Inp Nanowires Toward Silicon Photonic Applications. ACS Applied Materials & Interfaces (2022)

Ting-Yuan ChangHyunseok KimWilliam A. HubbardKhalifa M. Azizur-RahmanJung Jin JuJe-Hyung KimWook-Jae LeeDiana Huffaker

Monolithic Integration of a 10 μM Cut-Off Wavelength Inas/Gasb Type-II Superlattice Diode on Gaas Platform. Scientific Reports (2022)

D. C. M. KwanM. KesariaJ. J. JiménezV. SrivastavaM. DelmasB. L. LiangF. M. MoralesD. L. Huffaker

Emerging Type‐II Superlattices of Inas/Inassb and Inas/Gasb for Mid‐Wavelength Infrared Photodetectors. Advanced Photonics Research (2021)

Dhafer O. AlshahraniManoj KesariaEzekiel A. AnyebeV. SrivastavaDiana L. Huffaker

materials scienceinfrared opticmid-wavelength infrared photodetectorstype-ii superlatticesoptoelectronicsphotonics

III–V Nanowires on Silicon (100) as Plasmonic-Photonic Hybrid Meta-Absorber. Scientific Reports (2021)

Hyunseok KimHaneui BaeTing-Yuan ChangDiana L. Huffaker

Integrated and Spectrally Selective Thermal Emitters Enabled by Layered Metamaterials. Nanophotonics (2021)

Yongkang GongKang LiNigel CopnerHeng LiuMeng ZhaoBo ZhangAndreas PuschDiana L. HuffakerSang Soon Oh

materials sciencenanophotonicslayered metamaterialsnanomaterialsnanotechnologyphotonics

1
2
3
4
5
41
10 / page

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