Faculty

Institution

Unit

Venue

Cammy R. Abernathy

Professor of Materials Science & Engineering William H Wadsworth Director of the Engineering Leadership Institute

University of Florida

Affiliations

Herbert Wertheim College of Engineering

Department of Materials Science & Engineering

Cammy R. Abernathy is currently serving as a Materials Science & Engineering Professor of Materials Science & Engineering William H Wadsworth Director of the Engineering Leadership Institute at University of Florida.

Honors

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Experiences

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Education

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Cammy R. Abernathy

University of Florida

Professor of Materials Science & Engineering William H Wadsworth Director of the Engineering Leadership Institute

You can click a keyword to filter the displayed items

materials science electronic materials solid-state electronics semiconductors optoelectronics applied physics microelectronics electronics electrical engineering aluminum gallium nitride semiconductor technology thin films materials engineering semiconductor devices engineering condensed matter physics surface science power electronics advanced materials material research gan power device printed electronics semiconductor nanostructures plasma etching condensed matter additive manufacturing compound semiconductors epitaxial growth semiconductor device fabrication power semiconductor devices semiconductor materials plasma processing vacuum device crystal growth microwave technology material chemistry electrochemical interfaces organic electronics vlsi technology dry etching plasma chemistry oxide electronics ion implantation molecular beam epitaxy thermal engineering wide-bandgap semiconductors composite science electrochemical process ferromagnetism solid-state chemistry surface electrochemistry solid-state lighting iii-v semiconductors mechanical science electronic engineering carbon-based materials iii-v nitrides applied chemistry surface nanotechnology metals surface engineering magnetic materials trimethylamine alane sensor technology surface passivation related compounds thermal stability dry etch damage proton irradiation gate oxide ohmic contacts selective dry etching carbon doping rapid thermal processing group iii nitrides ingaalp alloys chemical vapor deposition chemical engineering chemical deposition thin film processing thin film process technology molecular electronics

Notable Scholarly Works

Notable Federal Grants

Collaborators

Growth and Characterization of (Sc2O3)X(Ga2O3)1−X by Molecular Beam Epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2022)

Mark S. HladBrent P. GilaCammy R. AbernathyFan RenS. J. Pearton

surface scienceepitaxial growthengineeringadvanced materialsmolecular beam epitaxymaterials engineeringmaterials scienceapplied physicssemiconductorselectronic materialscrystal growththin films

Growth of (Smxga1−X)2O3 by Molecular Beam Epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2022)

Anthony D. StewartBrent P. GilaCammy R. AbernathyS. J. Pearton

surface scienceepitaxial growthmolecular beam epitaxymaterials scienceapplied physicsvacuum devicecrystal growththin films

Depth-Resolved Cathodoluminescence Spectroscopy Characterization of Rf Stressed Algan/Gan High Electron Mobility Transistors. ECS Solid State Letters (2013)

E. A. DouglasD. ZeenbergM. MaedaB. P. GilaC. R. AbernathyS. J. PeartonF. Ren

power electronicsrf semiconductorsemiconductor technologysemiconductor nanostructurestechnologymicroelectronicscondensed matter physicsoptoelectronicsmaterials scienceapplied physicssemiconductorssolid-state electronicselectronic materialscondensed matterelectronicsgan power devicethin filmsaluminum gallium nitride

Gan Hemt Degradation: Effect of Rf Stress. Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2012)

Erica DouglasB. P. GilaF. RenC. R. AbernathyS. J. Pearton

power electronicsvlsi technologyheme degradationoptoelectronicsmaterials scienceelectronic materialselectrochemical processelectrical engineeringelectrochemical engineeringelectrochemistryfundamental electrochemistryengineeringsolid-state electronicssemiconductorsgan power devicealuminum gallium nitridemicroelectronicsgan hemt degradationrf stresstransition metal chemistry

Novel Dielectrics for Gan Device Passivation and Improved Reliability. Springer eBooks (2012)

F. RenStephen J. PeartonB. P. GilaC. R. AbernathyR. C. Fitch

device reliabilityengineeringgan device passivationmicroelectronicsnovel dielectricsoptoelectronicsmaterials scienceelectronicselectrical engineeringaluminum gallium nitride

Environmental Stability of Candidate Dielectrics for Gan-Based Device Applications. Journal of Applied Physics (2009)

A. M. HerreroB. P. GilaA. GergerA. ScheuermannR. DaviesC. R. AbernathyS. J. PeartonF. Ren

power electronicsenvironmental stabilityoptoelectronicsmaterials sciencegan-based device applicationselectronic materialssemiconductor deviceselectronicsdefect tolerancetechnologysemiconductorscandidate dielectricscharge separationthin filmsaluminum gallium nitridecomposite sciencemicroelectronicsapplied physicsmicroelectronics reliabilitytime-dependent dielectric breakdownflexible electronics

Gaas Hemt Reliability and Degradation Mechanisms After Long Term Stress Testing. MRS Proceedings (2009)

Erica Ann DouglasDavid P. CheneyKe Hung P. ChenChih-Yang P. ChangLii-Cherng P. LeuBrent P. GilaCammy R. AbernathyStephen J. Pearton

mechanical engineeringgaas hemt reliabilityengineeringmaterials engineeringdegradation mechanismsreliability engineeringmaterials sciencesemiconductorsreliability

Review of Recent Advances in Transition and Lanthanide Metal–Doped Gan and Zno. Chemical Engineering Communications (2009)

Ryan P. DaviesC. R. AbernathyS. J. PeartonD. P. NortonM. P. IvillF. Ren

surface sciencelayered materialsengineeringadvanced materialsadditive manufacturingsemiconductor technologymaterials engineeringmaterials sciencealuminum gallium nitridelanthanide metal-doped gancompound semiconductorstransition metal chemistrythin filmsadvanced electrode materialchemical engineering

Determination of Sm2O3∕Gaas Heterojunction Band Offsets by X-Ray Photoelectron Spectroscopy. Applied Physics Letters (2008)

A. D. StewartA. GergerB. P. GilaC. R. AbernathyS. J. Pearton

oxide electronicsgallium oxidex-ray photoelectron spectroscopysolid-state electronicssemiconductorsapplied physicsmaterials sciencephysicselectronic materialssemiconductor deviceselectronicscompound semiconductorsthin films

Effects of Proton Irradiation on the Magnetic Properties of Gagdn and Gacrn. New Journal of Physics (2008)

J K HiteK K AllumsG T ThalerC R AbernathyS J PeartonR M FrazierR DwivediR WilkinsJ M Zavada

surface sciencenuclear physicsproton irradiationradiation chemistryradiation oncologyparticle technologyradiationmaterials scienceelectronic materialsphysicsmagnetismthin films

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Cammy R. Abernathy

Professor of Materials Science & Engineering William H Wadsworth Director of the Engineering Leadership Institute

University of Florida

Affiliations

Herbert Wertheim College of Engineering

Department of Materials Science & Engineering

Honors

Create free account to unlock more features

Experiences

Create free account to unlock more features

Education

Create free account to unlock more features

Cammy R. Abernathy

University of Florida

Professor of Materials Science & Engineering William H Wadsworth Director of the Engineering Leadership Institute

You can click a keyword to filter the displayed items

Notable Scholarly Works

Notable Federal Grants

Collaborators

Growth and Characterization of (Sc2O3)X(Ga2O3)1−X by Molecular Beam Epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2022)

Mark S. HladBrent P. GilaCammy R. AbernathyFan RenS. J. Pearton

surface scienceepitaxial growthengineeringadvanced materialsmolecular beam epitaxymaterials engineeringmaterials scienceapplied physicssemiconductorselectronic materialscrystal growththin films

Growth of (Smxga1−X)2O3 by Molecular Beam Epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2022)

Anthony D. StewartBrent P. GilaCammy R. AbernathyS. J. Pearton

surface scienceepitaxial growthmolecular beam epitaxymaterials scienceapplied physicsvacuum devicecrystal growththin films

Depth-Resolved Cathodoluminescence Spectroscopy Characterization of Rf Stressed Algan/Gan High Electron Mobility Transistors. ECS Solid State Letters (2013)

E. A. DouglasD. ZeenbergM. MaedaB. P. GilaC. R. AbernathyS. J. PeartonF. Ren

Gan Hemt Degradation: Effect of Rf Stress. Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2012)

Erica DouglasB. P. GilaF. RenC. R. AbernathyS. J. Pearton

Novel Dielectrics for Gan Device Passivation and Improved Reliability. Springer eBooks (2012)

F. RenStephen J. PeartonB. P. GilaC. R. AbernathyR. C. Fitch

device reliabilityengineeringgan device passivationmicroelectronicsnovel dielectricsoptoelectronicsmaterials scienceelectronicselectrical engineeringaluminum gallium nitride

Environmental Stability of Candidate Dielectrics for Gan-Based Device Applications. Journal of Applied Physics (2009)

A. M. HerreroB. P. GilaA. GergerA. ScheuermannR. DaviesC. R. AbernathyS. J. PeartonF. Ren

Gaas Hemt Reliability and Degradation Mechanisms After Long Term Stress Testing. MRS Proceedings (2009)

Erica Ann DouglasDavid P. CheneyKe Hung P. ChenChih-Yang P. ChangLii-Cherng P. LeuBrent P. GilaCammy R. AbernathyStephen J. Pearton

mechanical engineeringgaas hemt reliabilityengineeringmaterials engineeringdegradation mechanismsreliability engineeringmaterials sciencesemiconductorsreliability

Review of Recent Advances in Transition and Lanthanide Metal–Doped Gan and Zno. Chemical Engineering Communications (2009)

Ryan P. DaviesC. R. AbernathyS. J. PeartonD. P. NortonM. P. IvillF. Ren

Determination of Sm2O3∕Gaas Heterojunction Band Offsets by X-Ray Photoelectron Spectroscopy. Applied Physics Letters (2008)

A. D. StewartA. GergerB. P. GilaC. R. AbernathyS. J. Pearton

Effects of Proton Irradiation on the Magnetic Properties of Gagdn and Gacrn. New Journal of Physics (2008)

J K HiteK K AllumsG T ThalerC R AbernathyS J PeartonR M FrazierR DwivediR WilkinsJ M Zavada

surface sciencenuclear physicsproton irradiationradiation chemistryradiation oncologyparticle technologyradiationmaterials scienceelectronic materialsphysicsmagnetismthin films

1
2
3
4
5
55
10 / page

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dielectric growth

electronic material

David P. Norton

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thin film deposition

electronic material

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Kevin Jones

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nanoelectronics

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