Faculty

Institution

Unit

Venue

Bert Kerr

Associate Professor

New Mexico Institute of Mining and Technology

Affiliations

Mathematics Department

Bert Kerr is currently serving as a Mathematics Associate Professor at New Mexico Institute of Mining And Technology.

Honors

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Experiences

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Education

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Bert Kerr

New Mexico Institute of Mining and Technology

Associate Professor

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applied physics electrical engineering optoelectronics electronics physics semiconductors solid-state electronics photoelectric measurement compound semiconductors radiation semiconductor technology tunneling microscopy device modeling quantum heterostructures photonics light science luminescence radiation-induced photocurrent carrier lifetime time-dependent changes analytic 1d nuclear physics electron configuration optical properties nuclear science electronic materials electromagnetic compatibility photoelectric sensor electronic engineering semiconductor devices photoluminescence wide-bandgap semiconductors nonconcurrent neutron pulse ionizing radiation band offset analytic light—or finite 1d epitaxial diodes epitaxial structures band offset enhancement medici simulator numerical solutions non-concurrent neutron pulse new analytic 1d

Notable Scholarly Works

Notable Federal Grants

Collaborators

Analytic Band-To-Trap Tunneling Model Including Band Offset for Heterojunction Devices. Journal of Applied Physics (2019)

electronic engineeringelectronic materialsband offsetsemiconductor devicestunneling microscopysolid-state electronicselectronicssemiconductorselectrical engineeringquantum heterostructuresapplied physicsdevice modeling

Analytic Band-To-Trap Tunneling Model Including Electric Field and Band Offset Enhancement. (2018)

computational electromagneticsband offset enhancementtunneling microscopyelectrical engineeringelectromagnetic compatibilitymicroelectronicsapplied physicsdevice modeling

Efficient Band-To-Trap Tunneling Model Including Heterojunction Band Offset. ECS Transactions (2017)

tunneling microscopysolid-state electronicselectronicselectrical engineeringmicroelectronicsquantum heterostructuresapplied physicsdevice modeling

A New Time-Dependent Analytic Compact Model for Radiation-Induced Photocurrent in Epitaxial Structures. (2013)

physicsradiation-induced photocurrentepitaxial structuresphotoelectric measurementradiationapplied physicsoptoelectronicslight sciencephotonics

A New Time-Dependent Analytic Model for Radiation-Induced Photocurrent in Finite 1D Epitaxial Diodes. (2012)

finite 1depitaxial diodesradiation-induced photocurrentsolid-state electronicselectronicssemiconductorselectrical engineeringphotoelectric measurementapplied physicsoptoelectronicscompound semiconductors

Analytic 1D Pn Junction Diode Photocurrent Solutions Following Ionizing Radiation and Including Time-Dependent Changes in the Carrier Lifetime.. (2011)

physicstime-dependent changescarrier lifetimesolid-state electronicsanalytic 1delectronicssemiconductorselectrical engineeringphotoelectric measurementapplied physicsoptoelectronicssemiconductor technologycompound semiconductors

New Semi-Analytic 1D Abrupt Pn Junction Diode Photocurrent Solutions Following Ionizing Radiation and Including Time-Dependent Changes in the Applied Bias.. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (2011)

physicsapplied biastime-dependent changessolid-state electronicselectronicssemiconductorselectrical engineeringwide-bandgap semiconductorsphotoelectric measurementnew semi-analytic 1dapplied physicsoptoelectronicssemiconductor technologycompound semiconductors

Analytic 1-D $Pn$ Junction Diode Photocurrent Solutions Following Ionizing Radiation and Including Time-Dependent Changes in the Carrier Lifetime From a Nonconcurrent Neutron Pulse. IEEE Transactions on Nuclear Science (2010)

physicsphotoelectric sensornonconcurrent neutron pulsenuclear physicsionizing radiationnuclear sciencecarrier lifetimesolid-state electronicselectron configurationelectronicssemiconductorselectrical engineeringphotoelectric measurementradiationapplied physicsoptoelectronicssemiconductor technologycompound semiconductors

Comparison of Analytic 1D Pn Junction Diode Photocurrent Solutions Following Ionizing Radiation With Numerical Solutions Obtained With the Medici Simulator.. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (2010)

physicsmedici simulatornumerical solutionsanalytic 1delectronicssemiconductorsphotoelectric measurementradiationapplied physicsoptoelectronicsluminescencecompound semiconductors

New Analytic 1D Pn Junction Diode Transient Photocurrent Solutions Following Ionizing Radiation and Including Time-Dependent Carrier Lifetime Degradation From a Non-Concurrent Neutron Pulse.. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (2010)

physicsnon-concurrent neutron pulsesolid-state electronicselectronicssemiconductorselectrical engineeringphotoelectric measurementradiationapplied physicsoptoelectronicssemiconductor technologycompound semiconductorsnew analytic 1d

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Bert Kerr

Associate Professor

New Mexico Institute of Mining and Technology

Affiliations

Mathematics Department

Bert Kerr is currently serving as a Mathematics Associate Professor at New Mexico Institute of Mining And Technology.

Honors

Create free account to unlock more features

Experiences

Create free account to unlock more features

Education

Create free account to unlock more features

Bert Kerr

New Mexico Institute of Mining and Technology

Associate Professor

You can click a keyword to filter the displayed items

Notable Scholarly Works

Notable Federal Grants

Collaborators

Analytic Band-To-Trap Tunneling Model Including Band Offset for Heterojunction Devices. Journal of Applied Physics (2019)

Analytic Band-To-Trap Tunneling Model Including Electric Field and Band Offset Enhancement. (2018)

computational electromagneticsband offset enhancementtunneling microscopyelectrical engineeringelectromagnetic compatibilitymicroelectronicsapplied physicsdevice modeling

Efficient Band-To-Trap Tunneling Model Including Heterojunction Band Offset. ECS Transactions (2017)

tunneling microscopysolid-state electronicselectronicselectrical engineeringmicroelectronicsquantum heterostructuresapplied physicsdevice modeling

A New Time-Dependent Analytic Compact Model for Radiation-Induced Photocurrent in Epitaxial Structures. (2013)

physicsradiation-induced photocurrentepitaxial structuresphotoelectric measurementradiationapplied physicsoptoelectronicslight sciencephotonics

A New Time-Dependent Analytic Model for Radiation-Induced Photocurrent in Finite 1D Epitaxial Diodes. (2012)

Analytic 1D Pn Junction Diode Photocurrent Solutions Following Ionizing Radiation and Including Time-Dependent Changes in the Carrier Lifetime.. (2011)

physicsmedici simulatornumerical solutionsanalytic 1delectronicssemiconductorsphotoelectric measurementradiationapplied physicsoptoelectronicsluminescencecompound semiconductors

1
2
10 / page